Layer-by-Layer Synthesis and Analysis of the the Phase Composition of Cd<sub>x</sub> Te<sub>y</sub>O<sub>z</sub>/CdS/por-ZnO/ZnO Heterostructure
Сергій Ковачов, Ihor Bohdanov, Zhakyp T. Karipbayev, Yana Suchikova, Tamara Tsebriienko, Anatoli I. Popov
Abstract
Cd <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Te <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">z</inf> /CdS/por-ZnO/ZnO heterostructures were synthesized using a combination of electrochemical etching followed by the ion layer adsorption and reaction method (SILAR). Electrochemical etching was applied to form a porous ZnO layer. Chemical deposition from the electrolyte solution was carried out to form CdS and Cd <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Te <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">z</inf> films. The phase composition of the obtained heterostructures was characterized using XRD and Raman methods. We have demonstrated that the Cd <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Te <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">z</inf> film consists of different phase configurations, depending on the concentration of each element. The extreme cases are the formation of Cd <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">z</inf> and TeyOz. Furthermore, the formation of complex CdTeO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> CdTe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</inf> oxides is observed. Such structures have prospects for wide application in electronic devices due to the ability to adjust the phase and component composition.