Utilizing Domain Engineering to Achieve High-Polarization Relaxor Ferroelectrics for Low-Consumption Ceramic Capacitors
Zixiong Sun, Liming Diwu, Yongming Hu, Shibo Zhao, Jingru Xu, Ting Wang, Yongping Pu, Zhuo Wang
Abstract
This study focuses on incorporating NaNbO 3 (NN) into the Ba 0.85 Ca 0.15 Zr 0.9 Ti 0.1 O 3 (BCZT) lattice to form (1 – x )BCZT- x NN ceramics. Although antiferroelectricity was not observed, an observed domain-movement-diminishment behavior with increasing NN dopant induced the formation of high polarization walls (HPWs) between adjacent C -phases. The 0.90BCZT-0.10NN composition exhibited superior polarization compared to most BCZT-based ferroelectrics, as validated by mathematical derivation. Integration of these findings revealed a W rec of 3.86 J/cm 3 at 360 kV/cm, with a high W rec / E b ratio defining energy consumption efficiency in dielectric capacitors. This work introduces a novel approach to fabricating low-consumption dielectric capacitors. Additionally, a significantly high W rec of 5.36 J/cm 3 was achieved with an NN dopant concentration of 0.30.