Laser Writing of GaN/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Photodetector Arrays
Pengxiang Sun, Xun Yang, Kexue Li, Zhipeng Wei, Wei Fan, Shaoyi Wang, Weimin Zhou, Chongxin Shan
Abstract
Abstract Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that involves precise control of surface preparation, lithography, and deposition techniques. Here the study demonstrates that GaN/Ga 2 O 3 heterojunctions can be fabricated utilizing laser processing to transform the surface of GaN into Ga 2 O 3 . The GaN/Ga 2 O 3 heterojunctions exhibit good reproducibility, uniformity, and ability to operate under zero bias, with a responsivity of 110.22 mA W −1 , a detection rate of 5.56 × 10 11 jones, and an external quantum efficiency of 42.34%. Moreover, an 8 × 8 photodetector array based on GaN/Ga 2 O 3 heterojunction is fabricated via laser writing and is demonstrated to have ultraviolet imaging capabilities. This report presents the pioneering fabrication of a photodetector array using laser writing. The findings offer a versatile and scalable approach for the production of large‐area heterojunction photodetector arrays.