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Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al <sub>2</sub> O <sub>3</sub> /HfO <sub>2</sub> /SiO <sub>2</sub> /Al <sub>2</sub> O <sub>3</sub> /SiO <sub>2</sub> /Si structure

Young Suh Song, Taejin Jang, Kyung Kyu Min, Myung-Hyun Baek, Junsu Yu, Yeonwoo Kim, Jong‐Ho Lee, Byung‐Gook Park

2020Japanese Journal of Applied Physics16 citationsDOI

Abstract

Abstract In this paper, we demonstrate retention improvement in nonvolatile charge-trapping memory cells by tunneling oxide engineering with Al 2 O 3 . By utilizing SiO 2 /Al 2 O 3 /SiO 2 layers for the tunneling oxide, it is shown that the threshold voltage window after 10 years is significantly improved from 0.78 V to 4.18 V through Synopsys Sentaurus technology computer-aided design simulation. In addition, retention improvement from incorporating SiO 2 /Al 2 O 3 /SiO 2 tunneling layers is compared with that using SiO 2 /Si 3 N 4 /SiO 2 tunneling layers. The relationship between charge-trapping layer thickness and trapped charge emission is also investigated. As a result, we open up the possibility of using HfO 2 as a charge-trapping layer with significant reliability enhancement.

Topics & Concepts

Non-volatile memoryTrappingQuantum tunnellingOxideData retentionCharge (physics)Materials scienceHigh-κ dielectricOptoelectronicsAnalytical Chemistry (journal)ChemistryDielectricPhysicsChromatographyEcologyMetallurgyBiologyQuantum mechanicsSemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural Computing
Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al <sub>2</sub> O <sub>3</sub> /HfO <sub>2</sub> /SiO <sub>2</sub> /Al <sub>2</sub> O <sub>3</sub> /SiO <sub>2</sub> /Si structure | Litcius