Three-dimensional narrow-bandgap perovskite semiconductor ferroelectric methylphosphonium tin triiodide for potential photovoltaic application
Han‐Yue Zhang, Ren‐Gen Xiong
Abstract
), featuring a narrow bandgap of 1.43 eV, was synthesized. The integration of ferroelectricity with initially moderate efficiency (2.23%) may afford a promising platform to investigate the ferroelectric photovoltaic effect in organic-inorganic halide perovskite solar cells.
Topics & Concepts
TriiodideMaterials scienceSemiconductorFerroelectricityPerovskite (structure)Band gapTinOptoelectronicsPhotovoltaic systemNanotechnologyDielectricChemistryCrystallographyMetallurgyElectrical engineeringDye-sensitized solar cellElectrodePhysical chemistryEngineeringElectrolytePerovskite Materials and ApplicationsElectronic and Structural Properties of Oxides2D Materials and Applications