Detrapping of the carriers from shallow states in a highly responsive, fast, broadband (UV-vis-NIR), self-powered SnSe/Si photodetector with asymmetric metal electrodes
Manoj Kumar, Sanju Rani, Kuldeep Singh Gour, Kapil Kumar, Reena Yadav, Sudhir Husale, M. Dinesh Kumar, Vidya Nand Singh
Abstract
Bias-dependent trapping and de-trapping can be seen in the SnSe device. At low bias, voltage trapping of the carriers can be seen in the device; they start to de-trap after 500 mV bias.
Topics & Concepts
PhotodetectorBroadbandOptoelectronicsMaterials scienceElectrodeMetalOpticsChemistryPhysicsMetallurgyPhysical chemistryChalcogenide Semiconductor Thin FilmsNanowire Synthesis and ApplicationsQuantum Dots Synthesis And Properties