The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs
Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, G. Verzellesi
Topics & Concepts
Materials scienceThreshold voltageOptoelectronicsTransistorDopingElectronVoltageSemiconductorStress (linguistics)Gate dielectricCarbon fibersElectrical engineeringPhysicsComposite numberPhilosophyLinguisticsEngineeringQuantum mechanicsComposite materialGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties