Field-Free Magnetization Switching in A1 CoPt Single-Layer Nanostructures for Neuromorphic Computing
Liu Yang, Chao Zuo, Ying Tao, Wen‐Di Li, Fang Jin, Yajuan Hui, Huihui Li, Kaifeng Dong
Abstract
Current-induced field-free magnetization switching in single-layer films has been widely investigated for the application of spin–orbit torque (SOT) drivers in low-power, high-density, and nano-sized memory. In this paper, we report field-free SOT switching with threefold angle dependence in A1 disordered single-layer CoPt using the MgO (111) substrate. It is found that the magnetization could not switch in the absence of an external in-plane magnetic field when the current was flowing in the direction of the mirror symmetry high-symmetry axis ([11–2]). While along the direction of the low-symmetry axis ([1–10]) which destroyed the mirror symmetry to the greatest extent, field-free switching could be performed, and the switching ratio was up to 30%. This was mainly attributed to the composition gradient-induced in-plane inversion asymmetry and the low symmetry at the interface of Co/Pt broken out-of-plane inversion. Furthermore, CoPt devices with nanoscale thickness exhibited stable multistate magnetic switching behavior without an external magnetic field, and simultaneously nonlinear synaptic characteristics were obtained. A neural network was established, in which the synaptic weights between the hidden layer and the output layer are updated by using the resistance state of SOT synaptic devices, and the network could achieve about 90.54% recognition accuracy when applied to MNIST’s handwritten digital dataset. This work confirmed that a field-free SOT switch could be realized in single-layer CoPt, which provided theoretical guidance and data support for spin devices.