Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructures
Chuanbing Cai, Yao Wen, Lei Yin, Ruiqing Cheng, Hao Wang, Xiaoqiang Feng, Liang Liu, Chao Jiang, Jun He
Abstract
Van der Waals multiferroic structures hold promises for advancing the development of low-power multifunctional nanoelectronics devices, but single-phase two-dimensional multiferroic materials are limited. In this study, we constructed a room-temperature P(VDF-TrFE)/Fe3GaTe2 heterostructure (ferromagnetic layer thickness of 4.8 nm). and demonstrate significant bidirectional modulation of the Curie temperature upon application of ±90 V. Specifically, the Curie temperature decreased from 326 K to 247 K under +90 V and increased to 366 K under −90 V. Notably, we observed layer-dependent magnetic modulation, In 3-layer Fe3GaTe2, transitioning from negative to positive polarization increases Curie temperature, while thicker configurations show a decrease. This phenomenon originates from the competition between interlayer/intralayer magnetic exchange coupling driven by the electric field (density functional theory calculations), supporting non-volatile switching of the magnetization state, which is suitable for high-precision neural network computing. This discovery provides an innovative approach for developing low-power multifunctional nanoelectronics devices using two-dimensional magnetoelectric coupling structures. The authors construct a room-temperature multiferroic heterostructure system based on P(VDFTrFE)/Fe3GaTe2, achieving a reversible electrically regulated transition between the ferromagnetic and paramagnetic states.