A comprehensive investigation of MoO<sub>3</sub>based resistive random access memory
Jameela Fatheema, Tauseef Shahid, Mohammad Mohammad, A. K. M. Sadrul Islam, Fouzia Malik, Deji Akinwande, Syed Rizwan
Abstract
The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.
Topics & Concepts
Resistive random-access memoryMaterials scienceOhmic contactMolybdenumBand gapOptoelectronicsDensity functional theoryOxideThermal conductionCondensed matter physicsElectrodeNanotechnologyChemistryComputational chemistryPhysicsMetallurgyComposite materialPhysical chemistryLayer (electronics)Advanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices