FeAl/MgO/FeAl MTJ with enhanced TMR and low resistance area product for MRAM: A first principle study
Manoj Kumar Yadav, Santosh Kumar Gupta
Topics & Concepts
FEALMagnetoresistive random-access memoryMaterials scienceTunnel magnetoresistanceQuantum tunnellingSpin-transfer torqueCondensed matter physicsScatteringAlloyElectrodeAluminiumMetallurgyOptoelectronicsIntermetallicRandom access memoryChemistryComposite materialMagnetizationMagnetic fieldPhysicsOpticsQuantum mechanicsPhysical chemistryComputer hardwareComputer scienceLayer (electronics)Magnetic properties of thin filmsQuantum and electron transport phenomenaHeusler alloys: electronic and magnetic properties