Lu-Alloyed SnO<sub>x</sub> Films With Tunable Optical Bandgap for Deep Ultraviolet Detection
Dan Zhang, Zhuogeng Lin, Wei Zheng
Abstract
This work proposes a strategy of alloying SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> with Lu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> to form an ultra-wide bandgap (>4.5 eV) ternary alloy film based on which a high-performance deep ultraviolet (DUV) detector is fabricated. A series of Lu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> Sn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (0 ≤ y ≤ 0.24) amorphous films are deposited on SiC substrates by magnetron sputtering with their band gap continuously adjustable from 4.0 eV to 4.9 eV. The findings here both confirm the feasibility of widening the band gap of Lu-alloyed SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> by increasing Lu content for the first time and prove the potential owned by this wide-bandgap alloy film in the field of DUV detection. This work can provide a reference for developing DUV detection technology through bandgap engineering in the future.