4.1 A 39GHz-Band CMOS 16-Channel Phased-Array Transceiver IC with a Companion Dual-Stream IF Transceiver IC for 5G NR Base-Station Applications
H.-C. Park, Dong‐Woo Kang, S. M. Lee, B. Park, Kyu Hong Kim, Juyul Lee, Yuuichi Aoki, Young Yoon, S. Lee, Dae‐Young Lee, Daehyun Kwon, S. Kim, Jongyun Kim, W. Lee, C. Kim, S. Park, Jongsun Park, Bohee Suh, Jaehyuk Jang, M. Kim, Donggyu Minn, I. Park, Sung‐Soo Kim, K. Min, Jongsun Park, Seung Ho Jeon, An-Sang Ryu, Y. Cho, Seung Tae Choi, Kyu Hwan An, Y. Kim, J. H. Lee, Jaeman Son, Sung-Gi Yang
Abstract
Increasing demands on high-data-rate and low-latency cellular communications are accelerating the developments of millimeter-wave (mm-wave) systems for 5G NR in 28 and 39GHz bands. In order to provide the 5G communication systems worldwide, high-performance and low-cost RF chipset solutions are required. Recently, 5G mm-wave CMOS/BiCMOS RF phased-array transceivers for the 28GHz band have been reported [1]–[5]. However, there are very limited reports for the 39GHz band [6], which is one of the main frequency bands in the US, Canada, China and other countries. In this paper, we present both a 39GHz 16-channel RF phased-array transceiver IC in 28nm CMOS and a dual-stream IF transceiver IC in 65nm CMOS. These chipsets can be scaled up to >500 RF phased-array elements and support dual-stream (MIMO) in 5G NR base-station applications.