Antiambipolar Transistor with Double Negative Differential Transconductances for Organic Quaternary Logic Circuits
Debdatta Panigrahi, Ryoma Hayakawa, Yutaka Wakayama
Abstract
Abstract Organic integrated circuits have emerged as potential candidates for next‐generation computing technology because of their low‐cost production, light weight, and mechanical flexibility. However, the incompatibility of organic devices with modern lithographic techniques leads to a major bottleneck, that is, low integration density. Herein, it is attempted to solve this issue by developing an organic quaternary inverter that exhibits four distinguishable logic states and thus, can significantly improve the level of device integration. The key component of the inverter is a double‐peaked antiambipolar transistor (DAAT) with a double sequential negative differential transconductance characteristic. First, the DAAT is developed by employing two lateral p‐n heterojunctions, namely C8‐BTBT/PTCDI‐C8 and C8‐BTBT/PhC2‐BQQDI, in which three distinct conducting paths are produced in a step‐by‐step manner in accordance with the increase in the gate voltage ( V G ). Next, the quaternary inverter circuit is implemented by connecting the DAAT with an n ‐type transistor. The inverter exhibits four logic states with a complete drain voltage to ground voltage sweep. Finally, a strategy of optimizing the thickness of the PTCDI‐C8 layer to improve the voltage transfer characteristics of the quaternary inverters is demonstrated. This study, thus, represents a step toward the development of high‐performance organic integrated circuits.