Barium oxide write-once read-many-times memory with a high resistance window
Chih-Chieh Hsu, Zong-Lin Cai, Pei-Xuan Long, M. H. Hsu, Bo-Ruei Huang, Wun-Ciang Jhang, Umakanta Nanda
Abstract
This study demonstrates write-once-read-many times memory characteristics of BaO x and uses an interfacial AlO x layer to improve the stability of the Al/BaO x /n + -Si memory.
Topics & Concepts
Materials scienceWindow (computing)Layer (electronics)BariumOxideBarium oxideOptoelectronicsNanotechnologyComputer scienceMetallurgyOperating systemSemiconductor materials and devicesAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices