Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
Vladimir V. Fedorov, Yury Berdnikov, N.V. Sibirev, Alexey D. Bolshakov, Sergey V. Fedina, G A Sapunov, Liliia N. Dvoretckaia, G. É. Cirlin, Demid A. Kirilenko, Maria Tchernycheva, Ivan S. Mukhin
Abstract
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.