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The fracture stress of 8-inch silicon carbide during the PVT growth

Binjie Xu, Sheng'ou Lu, Hao Cui, Xiaodong Pi, Deren Yang, Xuefeng Han

2024CrystEngComm11 citationsDOI

Abstract

Numerical studies involving elastic–plastic behaviors of σ ϕϕ , which causes SiC crystal fractures, were developed to investigate the fracture mechanism in 4H-SiC, indicating that the plastic deformations caused by the prismatic slips increase σ ϕϕ .

Topics & Concepts

Silicon carbideMaterials scienceFracture (geology)Stress (linguistics)CarbideComposite materialMetallurgyPhilosophyLinguisticsSilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesAdvanced ceramic materials synthesis
The fracture stress of 8-inch silicon carbide during the PVT growth | Litcius