Unveiling The Role of Cu<sup>+</sup> Doping in Rb<sub>2</sub>AgBr<sub>3</sub> Scintillators toward Enhanced Photoluminescence Quantum Efficiency and Light Yield
Yakun Hu, Jiance Jin, Kai Han, Zhiguo Xia
Abstract
Abstract Doping in luminescent metal halides has become an effective strategy for tailoring the optoelectronic properties. Herein, Cu + is introduced into Rb 2 AgBr 3 to design the synthesis of Rb 2 AgBr 3 : x Cu + , which possess cold‐white light emission at room‐temperature without changing the spectral profiles; however, the Cu + incorporation significantly enhances the photoluminescence quantum efficiency to 98.8% in Rb 2 AgBr 3 :0.05Cu + . Additionally, a high scintillation light yield of up to 79 250 photons MeV −1 and a low detection limit of 714.83 nGy s −1 have been achieved via this Cu + doping engineering. X‐ray imaging with a spatial resolution of up to 5.8 lp mm −1 is further realized using a large scintillator film prepared by mixing polydimethylsiloxane with Cu + doped Rb 2 AgBr 3 scintillators. This study provides a Cu + doping design principle for improving both the photoluminescence and scintillation performances of metal halides.