Diffusion limiting layer induced tantalum oxide based memristor as nociceptor
Debashis Panda, Yu-Fong Hui, Tseung‐Yuen Tseng
Abstract
The nociceptor is critical to developed the new generation human-like robots. It is a special sensory receptor that detects noxious stimuli and responds accordingly. This report demonstrates a novel TaN/Ta/TaOx/Al2O3/ITO/glass memristor as a nociceptor. The device shows bipolar switching with a positive set and a negative reset. High-resolution transmission microscopy observation confirms the presence of the ultrathin Al2O3 layer and the clear interface between oxides and electrodes. The experimental results measured through electric pulses confirm the key features of nociceptors such as threshold, relaxation, allodynia and hyperalgesia properties. The memristor is relaxed after 10 ms at 0.1 V. These nociceptive properties confirm that the TaOx-based memristors can be potentially used as electronic nociceptors.