High-performance near-infrared OLEDs maximized at 925 nm and 1022 nm through interfacial energy transfer
Chieh‐Ming Hung, Sheng‐Fu Wang, Wei‐Chih Chao, Jian-Liang Li, Bo‐Han Chen, Chih-Hsuan Lu, Kai-Yen Tu, Shang‐Da Yang, Wen‐Yi Hung, Yün Chi, Pi‐Tai Chou
Abstract
Abstract Using a transfer printing technique, we imprint a layer of a designated near-infrared fluorescent dye BTP-eC9 onto a thin layer of Pt(II) complex, both of which are capable of self-assembly. Before integration, the Pt(II) complex layer gives intense deep-red phosphorescence maximized at ~740 nm, while the BTP-eC9 layer shows fluorescence at > 900 nm. Organic light emitting diodes fabricated under the imprinted bilayer architecture harvest most of Pt(II) complex phosphorescence, which undergoes triplet-to-singlet energy transfer to the BTP-eC9 dye, resulting in high-intensity hyperfluorescence at > 900 nm. As a result, devices achieve 925 nm emission with external quantum efficiencies of 2.24% (1.94 ± 0.18%) and maximum radiance of 39.97 W sr −1 m −2 . Comprehensive morphology, spectroscopy and device analyses support the mechanism of interfacial energy transfer, which also is proved successful for BTPV-eC9 dye (1022 nm), making bright and far-reaching the prospective of hyperfluorescent OLEDs in the near-infrared region.