On the Bonding and Electrochemical Performance of Sputter Deposited WO<sub>3</sub> Thin Films
K. Naveen Kumar, Habibuddin Shaik, Sathish, V. Madhavi, Sheik Abdul Sattar
Abstract
Abstract Tungsten oxide (WO 3 ) thin films have attained a distinct and special place in the field of electrochromism. Therefore, any sort of study towards this material will invariably has lot of importance and technological significance. The films of WO 3 were deposited by reactive magnetron sputtering at various partial pressures and annealed at 475°C. There is a tremendous change in the bonding characteristics, which eventually shows significant change in the optical and electrochemical behavior. The bandgap of WO 3 films is found to be increasing with different oxygen partial pressure. A systematic study of cyclic voltammetry has been done to analyze the electrochemical behavior of WO 3 films. Oxidation and reduction peak currents have shown an increasing trend with the oxygen partial pressure. Raman spectroscopy has revealed the improvement in the atomic ordering in WO 3 films.