Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H<sub>2</sub>S Sensor at Room Temperature
Po‐Yi Chang, Ching-Fu Lin, Samer El Khoury Rouphaël, Ting‐Hsuan Huang, Chang-Mao Wu, Dominique Berling, Ping‐Hung Yeh, Chia-Jung Lu, Hsin‐Fei Meng, Hsiao‐Wen Zan, Olivier Soppera
Abstract
A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200-300 °C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.