MAX Phase Ti<sub>2</sub>AlN for HfO<sub>2</sub> Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio
Fabia F. Athena, Moses Nnaji, Diego Vaca, Mengkun Tian, Wolfgang Buchmaier, Khandker Akif Aabrar, Samuel Graham, Suman Datta, Satish Kumar, Eric M. Vogel
Abstract
Abstract A Ti 2 AlN MAX phase layered thin film electrode and oxygen getter layer for HfO 2 ‐based two‐terminal memristors is presented. The Ti 2 AlN/HfO x /Ti memristor devices exhibit enhanced resistive switching performance, including an ultra‐low reset current density (< 10 −8 M Ω cm 2 ), substantial on‐off ratio (≈ 6000), excellent multi‐level functionality (≈ 9 distinct states), impressive retention (up to 300 °C), and robust endurance (>200 million) as compared to conventional TiN and other alternative materials based memristors. Experimental measurements and modeling suggest that the distinctive combination of low thermal conductivity, high electrical conductivity, and unique ultra‐thin layer‐by‐layer structure of the Ti 2 AlN MAX phase thin film contribute to this exceptional performance with good reproducibility and stability. The results demonstrate for the first‐time the potential of this innovative sputtered MAX phase material for engineering energy‐efficient, high‐density non‐volatile digital, and analog memory devices aimed toward next‐generation sustainable artificial intelligence.