A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Asif Imran Emon, Mustafeez Ul Hassan, Abdul Basit Mirza, John Kaplun, Sama Salehi Vala, Fang Luo
Abstract
Wide bandgap (WBG) devices are a desirable choice for high-density energy conversion systems. In high-speed hard-switching applications, voltage overshoot across device terminals, oscillations at gate loop, and electromagnetic interference (EMI) become harder to mitigate, and the overall system reliability is reduced. To address the key challenges and harness the benefits offered by these latest generations of devices, improved and advanced packaging structures are required, as packaging technology often has a critical impact on module performance and reliability. This article summarizes the design procedure for power modules, essential parts, and available materials for the fabrication of a power module package. Moreover, it provides a review of commercially available gallium nitride-based high electron mobility transistors (GaN HEMTs) and state-of-the-art module packaging technologies adopted for them with a focus on module layout, module integration trends, and identifying their impacts on the GaN HEMT’s performance. Through this review, this article also discusses major challenges faced by designers with GaN HEMTs in power electronics applications and their potential solutions, which is critical for the mainstream adoption of GaN HEMTs and defining the future technology roadmap.