Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga <sub>2</sub> O <sub>3</sub> ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> <mml:mn>01</mml:mn> </mml:math> )-Al <sub>2</sub> O <sub>3</sub> -Si Substrate
Yibo Wang, Wenhui Xu, Genquan Han, Tiangui You, Fengwen Mu, Haodong Hu, Yan Liu, Xinchuang Zhang, Hao Huang, Tadatomo Suga, Xin Ou, Xiaohua Ma, Yue Hao
Abstract
Abstract We report the β-Ga 2 O 3 ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> <mml:mn>01</mml:mn> </mml:math> )/TiN Schottky barrier diode (SBD) on heterogeneous integrated Ga 2 O 3 -Al 2 O 3 -Si (GaOISi) substrate. The interface performance of GaOISi/TiN SBD and its dependence on the ambient temperature ( T amb ) are characterized. The measured capacitance ( C ) versus voltage ( V ) curves are not influenced by the frequency and the ambient temperature, which indicate a stable interface between Ga 2 O 3 and TiN. The SBD on GaOISi demonstrates a high on-state to off-state current ( I ON / I OFF ) ratio of 10 11 , a low R ON of 6.7 mΩ⋅cm 2 , and an on-set voltage full switch-on voltage V on of ∼1.1 V. As the temperature increases from 25 °C to 130 °C, the GaOISi/TiN SBD exhibits a stable I ON / I OFF ratio. Based on the thermionic emission model, the extracted ϕ B,eff decreases from 0.92 to 0.75 eV with the increasing of temperature, which leads to a reduction of V on .