Litcius/Paper detail

Band alignment of ultrawide bandgap ε-Ga2O3/h-BCN heterojunction epitaxially grown by metalorganic chemical vapor deposition

Xin Zhou, Li Zhang, Xiaodong Zhang, Yongjian Ma, Xing Wei, Tiwei Chen, Wenbo Tang, Kun Xu, Zhongming Zeng, Xinping Zhang, Houqiang Fu, Baoshun Zhang, Houqiang Fu, Baoshun Zhang

2022Applied Surface Science20 citationsDOI

Topics & Concepts

EpitaxyChemical vapor depositionHeterojunctionOptoelectronicsBand gapMaterials scienceMetalorganic vapour phase epitaxyDeposition (geology)ChemistryNanotechnologyLayer (electronics)BiologyPaleontologySedimentGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties
Band alignment of ultrawide bandgap ε-Ga2O3/h-BCN heterojunction epitaxially grown by metalorganic chemical vapor deposition | Litcius