Passivation principle of deep-level defects: a study of Sn<sub>Zn</sub> defects in kesterites for high-efficient solar cells
Ke Zhao, Huiwen Xiang, Rui Zhu, Chengyan Liu, Yu Jia
Abstract
The strong molecular orbital interaction and the octet electron counting rule are realized simultaneously by the formation of 2P S + Sn Zn defect complex for passivating the deep-level of Sn Zn defect in kesterite solar cells.
Topics & Concepts
KesteritePassivationMaterials scienceCrystallographyCZTSOptoelectronicsNanotechnologyChemistrySolar cellLayer (electronics)Chalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesSemiconductor materials and interfaces