Turn-On Voltage Instability of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Trench Schottky Barrier Diodes With Different Fin Channel Orientations
Hyun‐Seop Kim, Aditya K. Bhat, Matthew D. Smith, Martin Kuball
Abstract
Turn-on voltage instability of beta-gallium oxide (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3) vertical trench Schottky barrier diodes (SBDs) with different fin-channel orientations was investigated. Fins oriented along the [010] direction exhibited the highest turn-on voltage stability and the smallest hysteresis, while fin channels oriented along the [100] direction exhibited the greatest instability. This study suggests that charge trapping at the sidewalls of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 trench SBDs differs based on the fin channel orientation and that fin channels oriented along the [010] direction possess the best electrical characteristics and reliability.