Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory
Xiangjin Wu, Asir Intisar Khan, Hengyuan Lee, Chen-Feng Hsu, H. R. Zhang, Heshan Yu, Neel Roy, Albert V. Davydov, Ichiro Takeuchi, Xinyu Bao, H.‐S. Philip Wong, Eric Pop
Abstract
Abstract Data-centric applications are pushing the limits of energy-efficiency in today’s computing systems, including those based on phase-change memory (PCM). This technology must achieve low-power and stable operation at nanoscale dimensions to succeed in high-density memory arrays. Here we use a novel combination of phase-change material superlattices and nanocomposites (based on Ge 4 Sb 6 Te 7 ), to achieve record-low power density ≈ 5 MW/cm 2 and ≈ 0.7 V switching voltage (compatible with modern logic processors) in PCM devices with the smallest dimensions to date (≈ 40 nm) for a superlattice technology on a CMOS-compatible substrate. These devices also simultaneously exhibit low resistance drift with 8 resistance states, good endurance (≈ 2 × 10 8 cycles), and fast switching (≈ 40 ns). The efficient switching is enabled by strong heat confinement within the superlattice materials and the nanoscale device dimensions. The microstructural properties of the Ge 4 Sb 6 Te 7 nanocomposite and its high crystallization temperature ensure the fast-switching speed and stability in our superlattice PCM devices. These results re-establish PCM technology as one of the frontrunners for energy-efficient data storage and computing.