Paradigm of Magnetic Domain Wall-Based In-Memory Computing
Xiangyu Zheng, Junlin Wang, Guanqi Li, Xianyang Lu, Wenjia Li, Yichuan Wang, Li Chen, Haihong Yin, Jing Wu, Yongbing Xu
Abstract
While conventional microelectronic integrated circuits based on electron charges approach the theoretical limitations in foreseeable future, next-generation nonvolatile logic units based on electron spins have the potential to build logic networks of low power consumption. Central to this spin-based architecture is the development of a paradigm for in-memory computing with magnetic logic units. Here, we demonstrate the basic function of a transistor logic unit with patterned Y-shaped NiFe nanowires by gate-controlled domain-wall pinning and depinning. This spin-based architecture possesses the critical functionalities of transistors and can achieve a programmable logic gate by using only one Y-shaped nanostructure, which represents a universal design currently lacking for in-memory computing.