Selective Crystallization of Ferroelectric Hf<sub><i>x</i></sub>Zr<sub>1–<i>x</i></sub>O<sub>2</sub> via Excimer Laser Annealing
Myeong Seop Song, Kunwoo Park, Kyoungjun Lee, Jung Woo Cho, Tae Yoon Lee, Jungwon Park, Seung Chul Chae
Abstract
Herein, we report the ferroelectricity of Hf x Zr 1– x O 2 (HZO) thin films crystallized via excimer laser annealing at 25 °C under atmospheric conditions. We characterized the structure and antiferroelectric/ferroelectric properties of HZO thin films using X-ray diffraction and standard polarization–voltage hysteresis. The laser-annealed Hf 0.5 Zr 0.5 O 2 thin film was gradually crystallized with increasing laser pulse number. The HZO thin film series exhibited systemic changes in antiferroelectric/ferroelectric properties with variations in Zr concentration. In addition, we constructed a phase diagram of laser-annealed HZO thin films.
Topics & Concepts
FerroelectricityMaterials scienceThin filmAnnealing (glass)CrystallizationPulsed laser depositionLaserExcimer laserAnalytical Chemistry (journal)Polarization (electrochemistry)OptoelectronicsOpticsDielectricNanotechnologyChemistryComposite materialPhysicsChromatographyOrganic chemistryPhysical chemistryFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials