AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
Hsin-Ying Lee, Ting‐Wei Chang, Ching-Ting Lee
Topics & Concepts
Materials scienceOptoelectronicsTransconductanceGate dielectricCutoff frequencyBreakdown voltageGate oxideSaturation currentThreshold voltageTransistorAnalytical Chemistry (journal)VoltageElectrical engineeringChemistryChromatographyEngineeringGa2O3 and related materialsZnO doping and propertiesGaN-based semiconductor devices and materials