Numerical Simulations of FASnI<sub>3</sub> based Solar Cell with the Variation of Absorber Layer Thickness
Savita Rawat, Savita Kashyap, Jaya Madan, Rahul Pandey
Abstract
Tin based solar cells are considered as a promising contender in the photovoltaic (PV) industry. However, the performance of PV devices based on Formamidinium tin iodide (FASnI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> ) material is still lagging and has yet to realize the high conversion efficiency. To explore the device performance, the impact of thickness variation has been studied. SCAPS-1D tool is used to perform all the device simulations. The proposed device structure of Cu/PEDOT: PSS + WO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> /FASnI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> /PC <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">61</inf> Bm/FTO is designed. In this proposed work, the thickness of FASnI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> absorber is varied from 50 to 500 nm. After doing the variation, the device performance is optimized at 400 nm which provides higher PV parameters J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf> of 24.78 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf> of 0.951 V, FF of 78.75% and PCE of 16.74%. The reported results are providing the insight for further development of PV devices and can help to enhance the tin-based device performance.