Novel Write-Enhanced and Highly Reliable RHPD-12T SRAM Cells for Space Applications
Qiang Zhao, Chunyu Peng, Junning Chen, Zhiting Lin, Xiulong Wu
Abstract
In this brief, we proposed, based on the polarity upset mechanism of single-event transient voltage of n-channel metal-oxide-semiconductor (nMOS) transistors, a novel radiation hardened by polar design (RHPD) 12T SRAM cell to enhance the reliability and operation speed for space applications. Simulation results in Semiconductor Manufacturing International Corporation (SMIC) 65-nm CMOS commercial standard process show that the proposed RHPD-12T cell can tolerate all single-node upsets. Meanwhile, compared with We-QUATRO, QUATRO, and dual interlocked storage cell (DICE), the write speed of the proposed cell can be reduced by ~41.8 and ~35.3%, and the static power consumption is reduced by ~41.6 and ~46.3%, respectively. Monte Carlo (MC) simulation has proved that under high frequency and low supply (0.6 V) voltage, RHPD-12T has the minimum write failure probability compared with five other SRAM cells.