Design of high-bandwidth, low-voltage and low-loss hybrid lithium niobate electro-optic modulators
Peter O. Weigel, Forrest Valdez, Jie Zhao, Huiyan Li, Shayan Mookherjea
Abstract
Abstract The past decade has seen significant growth in the field of thin film lithium niobate electro-optic modulators, which promise reduced voltage requirements and higher modulation bandwidths on a potentially integrated platform. This article discusses the state-of-the-art in thin film modulator technology and presents a simplified simulation technique for quickly optimizing a hybrid silicon- or silicon nitride-lithium niobate modulator. Also discussed are the feasibility of creating a 1 V half-wave voltage, 100 GHz bandwidth modulator, and the design specifications for a single hybrid silicon-lithium niobate platform optimized to operate across all telecommunication bands (between 1260 and 1675 nm wavelengths).