Xenon ion implantation induced defects and amorphization in 4H–SiC: Insights from MD simulation and Raman spectroscopy characterization
Y. H. Fan, Zongwei Xu, Chengjuan Yang, Zhen Yang, Kun Zhang, Shuxian Zheng, Shuxian Zheng
Topics & Concepts
XenonMaterials scienceRaman spectroscopyIonVacancy defectSiliconIon implantationSilicon carbideSpectroscopyAmorphous solidCharacterization (materials science)HeliumMolecular dynamicsChemical physicsAtomic physicsAnalytical Chemistry (journal)Molecular physicsNanotechnologyOptoelectronicsCrystallographyOpticsComputational chemistryChemistryComposite materialOrganic chemistryPhysicsChromatographyQuantum mechanicsSilicon Carbide Semiconductor TechnologiesIon-surface interactions and analysisDiamond and Carbon-based Materials Research