Design Optimization Techniques in Nanosheet Transistor for RF Applications
Pragya Kushwaha, Avirup Dasgupta, Ming-Yen Kao, Harshit Agarwal, Sayeef Salahuddin, Chenming Hu
Abstract
Nanosheet gate-all-around transistors are analyzed for RF applications using calibrated TCAD simulations. The effects of stack spacing and number of stacks on device performance are studied and a substack design for improved RF performance is proposed. The novel substack design can improve cut-off frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${F}_{{t}}$ </tex-math></inline-formula> ) by ~10% and minimum number of substacks and minimum substack spacing should be used.
Topics & Concepts
NanosheetTransistorElectronic engineeringCapacitanceMaterials scienceMathematicsChemistryElectrical engineeringNanotechnologyEngineeringElectrodePhysical chemistryVoltageAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesRadio Frequency Integrated Circuit Design