Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters
Zhaofu Zhang, Yingying Guo, John Robertson
Topics & Concepts
Degradation (telecommunications)Materials scienceCarbon fibersMOSFETEngineering physicsChemical engineeringChemical physicsOptoelectronicsNanotechnologyComposite materialChemistryElectronic engineeringElectrical engineeringEngineeringTransistorComposite numberVoltageSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability