Enabling High Loading in Single‐Atom Catalysts on Bare Substrate with Chemical Scissors by Saturating the Anchoring Sites
Ang Li, Erjun Kan, Shuangming Chen, Zhengwei Du, Xuan Liu, Tongyu Wang, Wenjin Zhu, Hailing Huo, Jingjing Ma, Dong Liu, Li Song, Hao Feng, Markus Antonietti, Jinlong Gong
Abstract
Abstract Atomically dispersed metal catalysts often exhibit high catalytic performances, but the metal loading density must be kept low to avoid the formation of metal nanoparticles, making it difficult to improve the overall activity. Diverse strategies based on creating more anchoring sites (ASs) have been adopted to elevate the loading density. One problem of such traditional methods is that the single atoms always gather together before the saturation of all ASs. Here, a chemical scissors strategy is developed by selectively removing unwanted metallic materials after excessive loading. Different from traditional ways, the chemical scissors strategy places more emphasis on the accurate matching between the strength of etching agent and the bond energies of metal‐metal/metal‐substrate, thus enabling a higher loading up to 2.02 wt% even on bare substrate without any pre‐treatment (the bare substrate without any pre‐treatment generally only has a few ASs for single atom loading). It can be inferred that by combining with other traditional methods which can create more ASs, the loading could be further increased by saturating ASs. When used for CH 3 OH generation via photocatalytic CO 2 reduction, the as‐made single‐atom catalyst exhibits impressive catalytic activity of 597.8 ± 144.6 µmol h −1 g −1 and selectivity of 81.3 ± 3.8%.