Metal-semiconductor 1T/2H-MoS2 by a heteroatom-doping strategy for enhanced electrocatalytic hydrogen evolution
Yimin Jiang, Sihan Li, Fusheng Zhang, Weiyi Zheng, Liu‐Bin Zhao, Qingliang Feng
Abstract
Complicated synthesis procedure and instability of 1T-MoS2 impede its practical application for hydrogen evolution reaction. Here, we propose a new strategy to drive the synthesis of stabilized 1T-MoS2 by Ni doping. Ni doping forms the NiS covalent bonds, inducing the slip of S atoms and stabilizing 1T structure. The materials were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Electrochemical tests including linear sweep voltammetry etc. indicate that the 1T/2H-MoS2/8%Ni has an overpotential of 162 mV and a Tafel slope of 80 mV dec−1 along with a good stability.
Topics & Concepts
OverpotentialTafel equationLinear sweep voltammetryHeteroatomMaterials scienceRaman spectroscopyX-ray photoelectron spectroscopyDopingElectrochemistryCatalysisCyclic voltammetryElectrocatalystMetalCovalent bondNanotechnologyChemistryChemical engineeringPhysical chemistryOrganic chemistryOptoelectronicsElectrodeMetallurgyEngineeringPhysicsRing (chemistry)OpticsElectrocatalysts for Energy ConversionAdvanced battery technologies researchFuel Cells and Related Materials