A nonvolatile memory element for integration with superconducting electronics
Catherine Pot, W. F. Holmes-Hewett, E.-M. Anton, J. D. Miller, B. J. Ruck, Joe Trodahl
Abstract
We demonstrate a nonvolatile cryogenic magnetic memory element needed to support emerging superconducting- and quantum-computing technologies. The central element is a switchable tri-layer thin film magnetic dot comprising two semiconducting ferromagnetic GdxSm1−xN layers separated by an exchange-blocking Al layer. The materials are explored for their tunable magnetic responses, the potential to engineer compensating magnetic moments in the anti-parallel tri-layers. The stability of the parallel and anti-parallel states and the reproducibility over repeated cycles are also demonstrated. We show that the tri-layer stacks can be formed into dots as small as 4 μm diameter, without affecting their magnetic behavior.