A gate- and flux-controlled supercurrent diode effect
Federico Paolucci, Giorgio De Simoni, Francesco Giazotto
Abstract
Non-reciprocal charge transport in supercurrent diodes (SDs) has polarized growing interest in the last few years for their potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid superconductor/semiconductor structures or metallic systems subject to moderate magnetic fields, thus showing limited potentiality for practical applications in SCE. Here, we report the design and realization of a monolithic device that shows a valuable SD effect by exploiting a Dayem bridge-based superconducting quantum interference device. Our structure allows reaching rectification efficiencies (η) up to ∼6%. Moreover, the absolute value and the polarity of η can be selected on demand by the modulation of an external magnetic flux or by a gate voltage, thereby guaranteeing high versatility and improved switching speed. Furthermore, our SD operates in a wide range of temperatures up to about 70% of the superconducting critical temperature of the titanium film composing the interferometer. Our SD effect can find extended applications in SCE by operating in synergy with widespread superconducting technologies such as nanocryotrons, rapid single flux quanta, and memories.