Characterization of Eu-doped Ba<sub>2</sub>SiO<sub>4</sub>, a high light yield scintillator
Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, Takayuki Yanagida
Abstract
Photoluminescence and scintillation characteristics of Eu-doped Ba2SiO4 were investigated. A broad emission band due to Eu2+ is observed at 500 nm, and the photoluminescence and radioluminescence decay time constants are about 397 and 515 ns, respectively. From the pulse height distribution of 57Co γ-rays, the light yield of Eu:Ba2SiO4 is ∼48 000 ph MeV−1, which is comparable with those of developed oxide scintillators showing a high light yield. The results demonstrate that Eu-doped Ba2SiO4 is a high-performance scintillator for X- and γ-ray measurements and characterized by excellent scintillation output and afterglow.
Topics & Concepts
RadioluminescenceScintillatorAfterglowScintillationPhotoluminescenceYield (engineering)Materials scienceDopingAnalytical Chemistry (journal)Quantum yieldOpticsOptoelectronicsChemistryPhysicsFluorescenceAstrophysicsDetectorMetallurgyGamma-ray burstChromatographyRadiation Detection and Scintillator TechnologiesMedical Imaging Techniques and ApplicationsAtomic and Subatomic Physics Research