High‐Performance P‐N Junction Heterostructure with Carbon Quantum Dot and Nitrogen Self‐Doped Graphitic Carbon Nitride for Visible Light Photodetection
Pegah Zandi, Arindam Phani, Seonghwan Kim
Abstract
Abstract Organic photodetectors (OPDs) hold immense promise for optoelectronic applications. Here a zero‐biased, high‐performance organic photodetector employing a 2D organic heterostructure is introduced. The structure combines carbon quantum dots (CQDs) with nitrogen self‐doped graphitic carbon nitride (g‐C 3 N 4+ ) and is tested for alternating current (AC) photodetection on an interdigitated electrode platform. The study reveals extraordinary performance driven by the synergistic effects of efficient charge excitation, separation, and emission within the 2D/2D CQD/g‐C 3 N 4 + heterostructure, leveraging mechanisms of photoconduction, photogating, and fluorescence. A unique convergence to similar rise and decay times in the order of 2.9 ms is observed at higher frequencies in the visible (Vis) spectrum. Benchmarking against state‐of‐the‐art OPDs shows ultrahigh specific detectivity (4.60 × 10 18 Jones), ultrahigh responsivity (1.43 × 10 7 A W −1 ), high external quantum efficiency (43 × 10 7 %) at an optical intensity of 3.56 × 10 −4 mW cm −2 and a wavelength of 405 nm while delivering competitive performance at 532 and 635 nm as well. Moreover, a large linear dynamic range of 86–162 dB in the Vis spectrum is obtained. These enhancements promise development of a new generation of OPDs to advance light sensing and imaging applications at high frequency, marking a significant milestone in optoelectronic device engineering.