Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls
Duk‐Hyun Choe, Sunghyun Kim, Taehwan Moon, Sanghyun Jo, Hagyoul Bae, Seung‐Geol Nam, Yun Seong Lee, Jinseong Heo
Topics & Concepts
FerroelectricityOrthorhombic crystal systemPolarization (electrochemistry)Materials scienceNucleationScalabilityTopology (electrical circuits)Atomic unitsCondensed matter physicsNanotechnologyOptoelectronicsDomain (mathematical analysis)Engineering physicsComputer scienceDielectricPhysicsCrystallographyChemistryElectrical engineeringCrystal structureMathematicsThermodynamicsMathematical analysisPhysical chemistryDatabaseEngineeringQuantum mechanicsFerroelectric and Negative Capacitance DevicesElectronic and Structural Properties of OxidesAdvanced Memory and Neural Computing