Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage
Muhammad Ismail, Haider Abbas, Chandreswar Mahata, Changhwan Choi, Sungjun Kim
Topics & Concepts
Materials scienceResistive random-access memoryOhmic contactOptoelectronicsVoltageSchottky barrierLayer (electronics)ElectrodeReset (finance)Barrier layerNon-volatile memoryElectrical engineeringComposite materialDiodeChemistryEngineeringFinancial economicsEconomicsPhysical chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials