Modeling electronic and optical properties of III–V quantum dots—selected recent developments
Alexander Mittelstädt, A. Schliwa, Petr Klenovský
Abstract
Abstract Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In 1− x Ga x As y Sb 1− y /GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.
Topics & Concepts
Quantum dotLasing thresholdAtomic orbitalCascadeMaterials scienceElectronic structureOptoelectronicsQuantumBand gapQuantum dot laserBenchmark (surveying)LaserPhysicsCondensed matter physicsChemistrySemiconductor laser theorySemiconductorQuantum mechanicsGeographyGeodesyElectronWavelengthChromatographySemiconductor Quantum Structures and DevicesSpectroscopy and Laser ApplicationsSemiconductor Lasers and Optical Devices