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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N’dohi, Hervé Morel, Luong Viêt Phung, Thi Huong Ngo, P. de Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Y. Cordier, Dominique Planson

2022Microelectronics Journal15 citationsDOI

Topics & Concepts

Schottky barrierMaterials scienceSchottky diodeOptoelectronicsCathodoluminescenceReverse leakage currentRaman spectroscopyDeep-level transient spectroscopyDiodeCharacterization (materials science)Gallium nitrideAnalytical Chemistry (journal)Layer (electronics)ChemistryNanotechnologyOpticsSiliconLuminescencePhysicsChromatographyGaN-based semiconductor devices and materialsSemiconductor materials and devicesSemiconductor materials and interfaces
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes | Litcius