Understanding phase evolution of ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films with Al<sub>2</sub>O<sub>3</sub> and Y<sub>2</sub>O<sub>3</sub> inserted layers
Jonghoon Shin, Haengha Seo, Kun Hee Ye, Yoon Ho Jang, Dae Seon Kwon, Junil Lim, Tae Kyun Kim, Heewon Paik, Haewon Song, Ha Ni Kim, Seungyong Byun, Seong Jae Shin, Kyung Do Kim, Yong Bin Lee, In Soo Lee, Jung‐Hae Choi, Cheol Seong Hwang
Abstract
This study investigates the insertion traits of the Al 2 O 3 and Y 2 O 3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf 0.5 Zr 0.5 O 2 (HZO) thin films grown by atomic layer deposition (ALD).
Topics & Concepts
Atomic layer depositionCrystalliteThin filmFerroelectricityMaterials sciencePhase (matter)CrystallographyMineralogyAnalytical Chemistry (journal)DielectricChemistryNanotechnologyOptoelectronicsMetallurgyChromatographyOrganic chemistryFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices