Influence of Polysilicon Thickness on Properties of Screen‐Printed Silver Paste Metallized Silicon Oxide/Polysilicon Passivated Contacts
Aditya Chaudhary, Jan Hoß, Jan Lossen, Frank Huster, Radovan Kopecek, René van Swaaij, Miro Zeman
Abstract
This work investigates how the thickness of the polysilicon layer and temperatures during contact sintering influence the properties of SiO x /polysilicon passivated contacts. The n + polysilicon layers deposited by low‐pressure chemical vapor deposition (LPCVD) on top of a thin wet chemically grown interface oxide layer providing chemical and field‐effect passivation on n‐type monocrystalline silicon wafers are investigated. Three different polysilicon layer thicknesses of 50, 100, and 150 nm are considered in this work. A high level of passivation with implied V oc values above 735 mV and J 01 below 5 fA cm −2 is obtained for symmetric lifetime test samples. These samples are used to investigate the interaction of the silver paste with the polysilicon layer at different fast firing peak temperatures. Reduction in polysilicon layer thickness leads to an increase in contact resistivity as well as in J 0met . Excellent J 0met values of the order of J 01 with contact resistivity values below 2 mΩ cm 2 are obtained for samples with polysilicon layers of 100 and 150 nm thickness.